Renesas Electronics Singapore | News Releases

Renesas Electronics to Release Photocouplers with World-Top-Class High-Speed Switching Operation and Integrated IGBT Protection Function for IGBT Gate Drive

Thu, 31 Jan 2013 07:00:00 GMT

TOKYO, Japan, January 31, 2013 — Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced two new photocouplers PS9332L and PS9332L2, with an integrated insulated-gate bipolar transistor (IGBT) [Note 1] protection function, for applications such as industrial machinery and solar power systems. The new PS9332L and PS9332L2 feature an integrated active Miller clamp circuit [Note 2] to prevent IGBT malfunction, world-top-class high-speed switching (20 percent faster than conventional Renesas products) among IGBT drive photocouplers with integrated IGBT protection function, compact 8-pin SDIP (shrink dual inline package), and guaranteed high-temperature operation. The photocouplers can be used for gate drive of IGBT devices used in inverter circuits for motor control, etc.

Renesas Electronics and J-Devices Sign Memorandum of Understanding on Transfer of Back-End Facilities

Wed, 30 Jan 2013 07:00:00 GMT

TOKYO and USUKI, Japan, January 30, 2013 — Renesas Electronics Corporation (TSE: 6723, Renesas), a premier supplier of advanced semiconductor solutions, and J-Devices Corporation (J-Devices) today announced that they signed a Memorandum of Understanding today regarding the transfer of the semiconductor back-end production business of three facilities operated by Renesas' wholly owned manufacturing subsidiaries (the Hakodate Factory of Renesas Northern Japan Semiconductor, Inc. (Renesas Northern Japan), the Fukui Factory of Renesas Kansai Semiconductor Co., Ltd. (SKS), and the Kumamoto Factory of Renesas Kyushu Semiconductor Corp. (Renesas Kyushu)) and Renesas Northern Japan's wholly owned subsidiary, Hokkai Electronics Co., Ltd. (Hokkai Electronics) to J-Devices.

Renesas Electronics Announces Low On-State Resistance Power MOSFETs for More Power Efficient and Compact Server Power Supplies

Thu, 24 Jan 2013 07:00:00 GMT

TOKYO, Japan, January 24, 2013 — Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced three new low on-state resistance [Note 1] MOSFET [Note 2] products, including the µPA2766T1A, optimized for use as ORing [Note 3] FETs in power supply units for network servers and storage systems.

Renesas Electronics Announces the Implementation of Further Rationalization Initiatives, Including Optimization of the Personnel Structure

Thu, 17 Jan 2013 07:00:00 GMT

TOKYO, Japan, January 17, 2013 — Renesas Electronics Corporation (“Renesas Electronics” or “the Company”, TSE: 6723), a premier supplier of advanced semiconductor solutions, announced in “Renesas Electronics Announces Share Issue through Third-Party Allotment, and Change in Major Shareholders, Largest Shareholder who is a Major Shareholder, Parent Company and Other Related Companies,” released on December 10, 2012, the Company's intention to pursue “further rationalization initiatives, including further optimization of the personnel structure.” The Company presented a proposal and explanation to the labor union today regarding this direction of actions, and consultations have begun. A description of these initiatives is provided below.