Search (Search Center)Parametric | Document | FAQ | Non-Renesas Equivalent Product [ MOSFET ]| Obsolete/Discontinued Produc
Low voltage to high voltage power MOSFET family
Renesas Electronics's Power MOSFET family spans breakdown ranges from 25V to 1500V Vdss, ideal for a variety of consumer, automotive and industrial applications. Their wide range of current rating up to 180A drain current Id, in combination with low on-resistance Rds(on) offer outstanding energy efficiency. Renesas high performance Power MOSFET packages HVSON, LFPAK, WPAK(5x6 mm), HWSON(3x3 mm) are supplemented by Dual WPAK and Dual WPAK adn Dual HWSON packages, allowing high power density in a small mounting area for the most cost effective solutions. We also have standard packages such as TO-220, TO-247, TO-3P and so on.
The all new Super Junction MOSFET, SJ-MOSFET, in the 600V Vdss class is based on Renesas's own Deep Trench Technology.This tchnology offers small gate charge and gate-drain charge,Qg and Qgd, achieving low swiching lossed and high switch frequency, This all results in an outstanding Figure of Merit (FON)as a benchmark for low power lossed, both minimizing switching losses and static losses. This is the ideal choice for high speed switching and high current applications. Renesas Super Junction MOSFET technology will be continuously expanded to high voltage ranges.
Switchable for high-speed switching load switch
Integrated power devices including IC and 2 power MOSFETs in a package
Suitable for signal amplifying
Suitable for high-frequency signal amplifying