.SUBCKT NP100P04PDG 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation        *
*         All Rights Reserved        *
*Commercial Use or Resale Restricted *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 PMOS W=47475821u L=0.46u
DDS   1  3    DDS
CGS   5  3    2.073E-09
RG    2  5    5.0
RD    1  4    RTEMP 0.0012
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  0    DD1
DDG2  8  7    DD1
EGD1  9  0 8 0 1
EGD2 10  0 7 8 1
COX  10 11    1.00963E-08
DCRR 9  11    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  PMOS       PMOS  (LEVEL  = 3               TOX    = 440E-10
+ XJ     = 0.69E-6       LD     = 0                    
+ TPG    = 1              RS     = 0.00035        RD     = 0.5E-5
+ NSUB   = 1.60E17        IS     = 0               UO     = 600
+ NFS    = 0.93E12        THETA  = 0.6
+ ETA    = 0              KAPPA  = 0.3
+ KP     = 5.50E-6         PHI    = 1.080
+ CGSO   = 0              CGDO   = 0               CGBO   = 0        )
*************************************************************************
.MODEL DDS D (CJO=4.56643040042724E-09 VJ=1.83578193108246 M=0.641522747451055
+RS=0.00100880290432017 IS=6.11470881539364E-11 TT=19E-9 N=1.10358544873459 BV=53)
*************************************************************************
.MODEL DDG D (CJO=1.5641692421482E-09 VJ=5.5 M=0.415640951974002
+IS=1.00E-32 N=50 FC=1.00E-08)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=5.329216E-03 TC2=5.002181E-06)
*************************************************************************
.ENDS NP100P04PDG